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Ordering number : ENN7179A
2SJ615
P-Channel Silicon MOSFET
2SJ615
Ultrahigh-Speed Switching Applications
Preliminary Features
* * *
Package Dimensions
unit : mm 2062A
[2SJ615]
4.5 1.6 1.5
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
0.5
3
1.5
2
3.0
1
1.0
0.4
2.5 4.25max
0.4
(Bottom view)
0.75
1 : Gate 2 : Drain 3 : Source SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25C Conditions
Ratings --30 20 --2.5 --10 1.0 3.5 150 --55 to +150
Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-1.3A ID=-1.3A, VGS=--10V ID=-0.7A, VGS=--4V Ratings min --30 --1 10 --1.2 1.1 1.6 210 330 270 460 --2.6 typ max Unit V A A V S m m
Marking : JV
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1502 TS IM TA-3846 / 41002 TS IM TA-3523 No.7179-1/4
2SJ615
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=-2.5A VDS=--10V, VGS=-10V, ID=-2.5A VDS=--10V, VGS=-01V, ID=-2.5A IS=--2.5A, VGS=0 Ratings min typ 185 30 20 7 22 19 7.5 4.7 0.8 0.7 --0.97 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN 0V --10V VIN ID= --1.3A RL=11.5 VDD= --15V
D
PW=10s D.C.1%
VOUT
G
2SJ615 P.G 50
S
--2.0 --1.8 --1.6
ID -- VDS
--6 --5 V V --8 V
--2.0 --1.8 --1.6
ID -- VGS
VDS= --10V
V --4
Drain Current, ID -- A
Drain Current, ID -- A
--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
--1 0
--1.4
V
--1.4 --1.2 --1.0 --0.8
VGS= --3V
C Tc=
0 --0.5 --1.0 --1.5 --2.0 --2.5
--0.6 --0.4 --0.2 0
--25
--3.0
C
25C
--3.5
75
--4.0
Drain-to-Source Voltage, VDS -- V
800
IT02665 600
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT04263
RDS(on) -- Tc
Tc=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600 500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
500
400
ID= --0.7A
--1.3A
-I D=
300
, VG 0.7A
--4 S=
V
200
1.3A I D= --
= --10 , V GS
V
100
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT04264
Case Temperature, Tc -- C
IT04265
No.7179-2/4
2SJ615
3
yfs -- ID
VDS= --10V
Forward Transfer Admittance, yfs -- S
2
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
IF -- VSD
VGS=0
1.0 7 5
Tc
=
--2
5
C
75
C
2
C 5
3 2
Forward Current, IF -- A
Tc=75 C
0 --0.2 --0.4
0.1 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.6 --0.8 --1.0 --1.2 --1.4
Drain Current, ID -- A
100 7
IT04266 1000 7 5
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
25C --25C
IT04267
VDD= --15V VGS= --10V
td(off)
Switching Time, SW Time -- ns
5
Ciss, Coss, Crss -- pF
3 2
3 2
Ciss
10 7 5 3 2
tf
100 7 5 3 2
td(on)
tr
Coss
Crss
0 --5 --10 --15 --20 --25 --30 IT02671
1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3
10
Drain Current, ID -- A
--10
IT04268 2 --10 7 5
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --2.5A
Drain Current, ID -- A
IDP= --10A
<10s
10
--8
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
ID= --2.5A
DC
1m
0
10
s
s
--6
10
op
ms
0m
s
n
--4
Operation in this area is limited by RDS(on).
era
tio
--2
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board(250mm2!0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Total Gate Charge, Qg -- nC
1.2
IT04269 4.0
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
IT04270
PD -- Tc
Allowable Power Dissipation, PD -- W
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
1.0
M
ou
nt
0.8
ed
on
ac
er
0.6
am
ic
bo
ar
d(
0.4
25
0m
m2 !
0.8
0.2
m
m
)
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
IT04271
Case Temperature, Tc -- C
IT04272
No.7179-3/4
2SJ615
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2002. Specifications and information herein are subject to change without notice.
PS No.7179-4/4
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